Gettering of Fe at the End of Range Loops in Fe-Implanted InP

نویسنده

  • C. Frigeri
چکیده

TEM and SIMS analyses of InP submitted to single and double implantation have allowed to establish that the end of range (EOR) dislocation loops, mostly of the Frank type, are efficient gettering sites for the implanted Fe dopant. The gettering rate increases with increasing annealing temperature, due to both increased Fe mobility and loop coarsening. Besides the EOR loops, other extended defects, e.g. the tangled networks of dislocations at the interfaces of bands of twins, are seen to getter Fe. Such gettering strongly affects the diffusion of Fe upon annealing.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Implant isolation of both n-type InP and InGaAs by iron irradiation: Effect of post-implant annealing tem - Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE Int

1 MeV Fe' was implanted into n-type InP and InGaAs layers at different substrate temperatures, -196'C, room temperature (RT), 100°C and 2OO0C to obtain highresistivity regions. The sheet resistivity of the InP and InGaAs epilayers grown on semiinsulating (SI) InP substrates was measured as a function of substrate temperature and post-implantation annealing temperature (100 SOO'C). For InP, a ma...

متن کامل

Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon

This paper presents a direct quantitative comparison of the effectiveness of boron diffusion, phosphorus diffusion, and aluminum alloying in removing interstitial iron in crystalline silicon in the context of silicon solar cells. Phosphorus diffusion gettering was effective in removing more than 90% of the interstitial iron across a range of diffusion temperatures, sheet resistances, and iron d...

متن کامل

Preparation of Fe Substituted ZnO Nanoparticles and Investigation of Their Magnetic Behaviors

Nano-powders of diluted magnetic semiconductor Zn1-xFexO (0.0≤ x ≤0.1) were prepared via the sol-gel auto-combustion method. Crystal structure and phase identification carried out by X-Ray Diffraction (XRD) analysis. Mean crystallite size of the powders was estimated by Scherrer's formula. As M-H loops of the Fe substituted ZnO showed ferromagnetic behavior. The result...

متن کامل

خواص ساختاری و مغناطیسی چندلایه‌ای‌های نامتجانس /Fe(20Å)(XÅ)/Ag(Fe(20Å

We have deposited Fe/Ag/Fe multilayer by physical vapor deposition (PVD)method in different Ag thickness as spacer working in a vacuum of 2×10-6mbar. The structural properties , magnetic response of the samples at low temperatures and room temperature was investigated by XRD, physical properties measurement system (PPMS) and vibrating sample magnetometer (VSM) respectively. Hysteresis loops sho...

متن کامل

Precipitation of interstitial iron in multicrystalline silicon

The internal gettering of iron in silicon via iron precipitation at low processing temperatures is known to improve solar cell efficiencies. Studies have found that the optimal temperature lies in the range of 500 o C-600 o C. In this paper, we present experimental results on quantitatively analysing the precipitation of interstitial Fe in multicrystalline silicon wafers during the 500 o C-600 ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1999